dc.contributor.authorGanesan Vishal
dc.date.accessioned2018-01-03T07:09:36Z
dc.date.available2018-01-03T07:09:36Z
dc.date.issued2018
dc.identifier.urihttp://hdl.handle.net/10356/73129
dc.description.abstractThe measurement of capacitance by Charge Based Capacitor Measurement (CBCM) is the most widely used method currently. The reason behind is that the errors induced by the charge injection is effectively minimized. However, after analysing different Charge-Based Capacitance Measurement Techniques, the results so far show that the accuracy of the absolute value of the capacitance can still be improved. The improved Charge-Based Capacitance Measurement technique involves three transistor pairs where in one of the transistor pairs, the Pmos is replaced with Nmos. The method effectively reduces the charge injection flowing to the capacitor when the transistor is off and the capacitance value obtained is error-free. The measurement is carried out on the Traditional Charge-based Capacitance Measurement Circuit and the results are compared with the measurement performed using the improved technique and the accuracy of the absolute values of capacitance were discussed.en_US
dc.format.extent62 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleCharge-based capacitance measurement free from charge injection induced errorsen_US
dc.typeThesis
dc.contributor.supervisorZhang Yue Pingen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Science (Integrated Circuit Design)en_US


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