A study on complementary resistive switching charateristics in resistive random access memory for next-generation non-volatile memory technology
Date of Issue2017-12-11
School of Electrical and Electronic Engineering
Resistive random access memory (RRAM) has shown the potential to become the future universal memory. The novel concept of complementary resistive switching (CRS) provides the promise of a high-density, selector-less RRAM crossbar array implementation, free of the sneak-path current problem. CRS behavior in HfOx-based RRAM device, using fully compatible materials with current mainstream CMOS technology, was investigated systematically in terms of physical switching mechanism, current conduction mechanism, self-compliance set-switching mechanism, CRS stability, and engineering method to improve CRS voltage window and read margin for the implementation of high-performance RRAM devices with stable and reliable CRS.