dc.contributor.authorTavva Yaswanth
dc.date.accessioned2017-08-29T07:05:42Z
dc.date.available2017-08-29T07:05:42Z
dc.date.issued2017
dc.identifier.urihttp://hdl.handle.net/10356/72589
dc.description.abstractThe last decade saw a major shift in semiconductor industry constantly thriving for low power and high performance. We have reached to 10nm node which was never imagined a decade ago. The effect of scaling on performance is not significant at lower nodes compared to the cost/transistor. This calls for other candidates like Ge/Si (Germanium on Silicon) replacing standard silicon. This thesis studies and compiles results on epitaxial growth of germanium on silicon, characterization of interface strain/stress, roughness and threshold dislocation density (TDD) which quantify the growth quality of Ge. Characterization techniques include RAMAN, XRD, AFM are performed on the Ge/Si substrate and reported.en_US
dc.format.extent75 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleEngineered substrate for electronics and photonics applicationsen_US
dc.typeThesis
dc.contributor.supervisorTan Chuan Seng (EEE)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMASTER OF SCIENCEen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record