dc.contributor.authorTavva Yaswanth
dc.description.abstractThe last decade saw a major shift in semiconductor industry constantly thriving for low power and high performance. We have reached to 10nm node which was never imagined a decade ago. The effect of scaling on performance is not significant at lower nodes compared to the cost/transistor. This calls for other candidates like Ge/Si (Germanium on Silicon) replacing standard silicon. This thesis studies and compiles results on epitaxial growth of germanium on silicon, characterization of interface strain/stress, roughness and threshold dislocation density (TDD) which quantify the growth quality of Ge. Characterization techniques include RAMAN, XRD, AFM are performed on the Ge/Si substrate and reported.en_US
dc.format.extent75 p.en_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen_US
dc.titleEngineered substrate for electronics and photonics applicationsen_US
dc.contributor.supervisorTan Chuan Sengen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMaster of Scienceen_US

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