Inkjet printing of zno-sno2 hybrid nanostructure for high performance uv photodetectors (b420)
Ng, Ping Kee
Date of Issue2017-05-12
School of Mechanical and Aerospace Engineering
In Nano-printing of electronic devices, one area of great interest is the One-dimensional (1D) nanostructured metal oxide semiconductors such as nanowires(NWs) and Nanorods. They have attracted great interest and research because of both their distinct characteristics and potential applications. For example, SnO2 Nanowires with a wide band gaps of 3.7eV have been widely studied because of their high quantum efficiency in the ultraviolet (UV) region. Huge amount of application has been done in optoelectric devices such as visible-blind photodetectors and solar cells. This report will demonstrate and experiment with the manufacturing processes of a simple photodetector device using an inkjet printer. Factors that govern the outcome and quality of the device such as substrate concentration and temperature of annealing will be considered. The device will undergo photocurrent, photoresponse and UV-Visible Absorption test to determine the quality of the product produced. SEM image will be used to see the surface of the device to spot for any cracks due to the annealing process. Thereafter, further research can be implemented to improve on the efficiency and quality of the device. Through a simple experimentation of trial and error, the result obtains from the photoresponse experiment demonstrated in this report shows that different ratio used in our mixture can significantly affect the quality and performance of the device. The SEM images in this report provide a microscopic view to the cracks propagated after the annealing process. This report hopes to demonstrate the possibility of producing a device using an inkjet printer.
Final Year Project (FYP)
Nanyang Technological University