dc.contributor.authorYuan, Shuen_US
dc.contributor.authorHing, Peteren_US
dc.contributor.authorOoi, B. S.en_US
dc.contributor.authorZhang, Dao Huaen_US
dc.contributor.authorChua, Soon Junen_US
dc.date.accessioned2008-09-17T14:24:42Z
dc.date.available2008-09-17T14:24:42Z
dc.date.copyright2003en_US
dc.date.issued2003
dc.identifier.urihttp://hdl.handle.net/10356/6777
dc.description.abstractThis project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing parameters involved in RTA and AOII and device performance of LEDs and laser diodes.en_US
dc.format.extent215 p.
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
dc.titleRapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applicationsen_US
dc.typeResearch Reporten_US
dc.contributor.schoolSchool of Materials Engineeringen_US
dc.description.reportnumberRG 5/99


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