Non-imprinting high-speed erase SRAM IC design for low-power operation
Bian, Jia Kun
Date of Issue2016-05-20
School of Electrical and Electronic Engineering
This report discusses the design and characterization process and result of a novel SRAM: Non-imprinting High-speed Erase SRAM (NIHE SRAM). By erasing data clearly and instantly, the developed NIHE SRAM can be used to store highly confidential information. The first part of the report will review the conventional 6T SRAM design methodology and its figures of merit. In the second part, the NIHE SRAM cell operation will be discussed first, followed by the simulation result and analysis. Finally, the report will present the optimized version of NIHE SRAM cell’s layout. The NIHE SRAM cell was developed using Global Foundry 65nm technology.
Final Year Project (FYP)
Nanyang Technological University