Rapid thermal processing of GAN-based and ALGAINP-based semiconductors for semiconductor laser applications
Ooi, B. S.
Zhang, Dao Hua
Chua, Soon Jun
Date of Issue2003
School of Materials Engineering
This project aimed (1) to establish the relationship between the processing parameters involved in rapid thermal annealing (RTA) and anodic oxide induced intermixing (AOII) and material properties of semiconductor epitaxial layers, and (2) to establish the relationship between the processing parameters involved in RTA and AOII and device performance of LEDs and laser diodes.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Nanyang Technological University