dc.contributor.authorAdi Saat Mohamed Osman
dc.date.accessioned2015-05-25T08:53:15Z
dc.date.available2015-05-25T08:53:15Z
dc.date.copyright2015en_US
dc.date.issued2015
dc.identifier.urihttp://hdl.handle.net/10356/64286
dc.description.abstractOver the years, a growing interest has been made regarding the usage of magnetoelectric multiferroic in relation to the field of memory devices due to the magnetoelectric effect in contrast to traditional materials. This project will investigate the properties of a magnetoelectric multiferroic material, Pb(Zr,Ti)O3-Pb(Fe,Ta)O3 (PZTFT). Thin films of PZTFT were fabricated using a pulsed laser deposition (PLD) technique. To analyse the quality of the thin films fabricated, processes such as X-ray diffraction (XRD) technique, Atomic Force Microscopy (AFM) and Reflection High-Energy Diffraction were used. Based on the experiment done, it is found that a number of parameters will affect the surface smoothness of the thin film during the growth of PZTFT. After the preparation of PZTFT thin films, its conduction mechanism and ferroelectric properties were investigated under the different conditions. Different conduction mechanism were investigated in response to an applied electric field and a polarization hysteresis loop were measured. The leakage current and remnant polarization of the PZTFT samples were below expectations according the experimental data.en_US
dc.format.extent62 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Microelectronicsen_US
dc.titleElectrical characterization and conduction mechanism study of multi-functional thin films for electronic devicesen_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorZhu Weiguangen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeBachelor of Engineeringen_US


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