dc.contributor.authorNaw, Sandar Win
dc.date.accessioned2014-06-10T02:32:51Z
dc.date.available2014-06-10T02:32:51Z
dc.date.copyright2014en_US
dc.date.issued2014
dc.identifier.urihttp://hdl.handle.net/10356/61404
dc.description.abstractThe purpose of this project is to design a two-color InGaAsN/GaAs/AlGaAs quantum well intersubband transition photodetector using k.p method to calculate the energy levels and absorption. The radiation detection ranges for the two wavelengths are 3-5 μm (target: 4 μm) and 8-10 μm (target: 10 μm) using material InGaAsN/GaAs/AlGaAs step quantum wells. Two-color quantum well photodetectors have become potential demanding which are incorporated with commercial applications over traditional thermal detectors since QWIPs have advantages in fast response time, high impedance, and low power consumption. In quantum well photodetector, the electrons will be elevated from the quantum well to the barrier due to photon absorption. When the well width is sufficiently small, the motion of electrons in the well is quantized in the growth direction and the energy levels in this direction become discrete. Parameters like quantum well width and barrier widths are varied to obtain the desired wavelengths. In this project, barrier AlGaAs is set to 100Å, while other variables such as InGaAsN well width and, GaAs, barrier width, In(x) and N(y)InxGa1-xAs1-yNy] will have to adjust to get the target wavelengths.en_US
dc.format.extent45 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineeringen_US
dc.titleTwo-color ingaasn/gaas/algaas quantum well photodetectoren_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorFan Weijunen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeELECTRICAL and ELECTRONIC ENGINEERINGen_US
dc.contributor.supervisor2Fan Weijunen_US


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