dc.contributor.authorYeo, Chiew Yong
dc.date.accessioned2014-06-05T06:05:31Z
dc.date.available2014-06-05T06:05:31Z
dc.date.copyright2013en_US
dc.date.issued2013
dc.identifier.citationYeo, C .Y. (2013). Monolithic integration of GAAS-to-SI by direct wafer bonding. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/61132
dc.description.abstractWhile Silicon remains the dominant material today in matured very-large-scale-integration technology, most of the III-V compound semiconductors are direct bandgap materials with high electron mobilities that are highly sought in advanced space, automobile, and telecommunication applications. Hence, it would be ideal to integrate the best of Silicon and III-V compound semiconductors.en_US
dc.format.extent218 p.en_US
dc.language.isoenen_US
dc.subjectDRNTU::Engineeringen_US
dc.titleMonolithic integration of GAAS-to-SI by direct wafer bondingen_US
dc.typeThesis
dc.contributor.supervisorYoon Soon Fatt (EEE)en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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