Investigation on the formation of C54-TiSi2 used as contact metallization in ULSI application
Date of Issue2002
School of Materials Science and Engineering
Titanium silicide has been widely adopted as a contact material for gate, source and drain of semiconductor devices in the industry for several generations. Its applicability to sub-quarter-micron technologies, however, has been questioned due to difficulties of obtaining low sheet resistance on small geometries.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Nanyang Technological University