Laser processing of optoelectronic materials.
Tan, Bee Sim.
Date of Issue2004
School of Materials Science and Engineering
In this thesis, the objective is to study the effects of KrF excimer (248 nm) laser processing on gallium nitride (GaN) optoelectronic materials. p-GaN and GaN multiple quantum well (MQW) light-emitting diodes (LEDs) which operate in the blue and ultraviolet spectrum were used.
DRNTU::Engineering::Materials::Photonics and optoelectronics materials
Nanyang Technological University