Electromigration behaviour of copper metal lines in ULSI devices.
Ong, Sock Meng.
Date of Issue2004
School of Materials Science and Engineering
The present study focused on examining the failure mechanisms in both single-level and double-level Cu damascene structures for better understanding of the Cu electromigration behaviour.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Nanyang Technological University