Copper diffusion barriers for multilevel interconnecting metalization scheme in microelectronics appplication
Kim, Jae Hyung.
Date of Issue2002
School of Materials Science and Engineering
As a main part of thermal stability studies , the atomic intermixing, new compound formation and phase transitions in the test structure were studied. Another aim of our experiments is to clarify the effect of different Cu deposition methods on the diffusion barrier performance.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Nanyang Technological University