Processing and characterization of low-k materials for ULSI application
Date of Issue2004
School of Materials Science and Engineering
In this project, chemical vapor deposited carbon doped oxide films, with dielectric constants in the range of 2.7 to 3.5 were studied.
DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Nanyang Technological University