Electron cyclotron resonance (ECR) plasma etching study of GaAs and GaInP
Ng, Tien Khee.
Date of Issue2001
School of Electrical and Electronic Engineering
This thesis presents the Electron Cyclotron Resonance (ECR) plasma etching of GaAs and Ga(0.52)In(0.48)P grown using Solid Source Molecular Beam Epitaxy (SSMBE) with a view of applying the process for future heterojunction bipolar transistors (HBTs) fabrication.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Nanyang Technological University