View Item 
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Electrical and Electronic Engineering (EEE)
      • EEE Research Reports (Staff & Graduate Students)
      • View Item
      •   Home
      • 1. Schools
      • College of Engineering
      • School of Electrical and Electronic Engineering (EEE)
      • EEE Research Reports (Staff & Graduate Students)
      • View Item
      JavaScript is disabled for your browser. Some features of this site may not work without it.
      Subject Lookup

      Browse

      All of DR-NTUCommunities & CollectionsTitlesAuthorsBy DateSubjectsThis CollectionTitlesAuthorsBy DateSubjects

      My Account

      Login

      Statistics

      Most Popular ItemsStatistics by CountryMost Popular Authors

      About DR-NTU

      Carbon films deposition by filtered cathodic vacuum arc technique

      Thumbnail
      Main article (1.626Mb)
      Author
      Tay, Beng Kang
      Date of Issue
      2008
      School
      School of Electrical and Electronic Engineering
      Abstract
      Thin carbon films have been deposited by filtered cathode vacuum arc technique and a low bias voltage power supply. The substrate bias voltage ranged from -80 to -400V. It is important for thin films to have low internal stress and good adhesive properties for any applications. The results ascertain that stress levels were high at the bias voltage between -100 and -200V. By analysing the relationship between the compressive stress and the negative bias voltage applied on substrates, certain trends can be observed. Stress levels fluctuate greatly between -100V and -170V and the peak stress level would occur in this range. Delamination is likely to take place on films will high level of stress. Carbon nanotubes (CNTs) were grown on Ni catalyst layer under-CNT-metallization layers, namely SiO2, Al, Cu and Cr, using hot filament chemical vapour deposition (HFCVD). The morphology and microstructure of the CNT were analyzed by scanning electron microscopy (SEM) and Raman spectrometer. It was found that the level of interaction between the Ni catalyst layer and under-CNT-metallization layer has significant effects on carbon nanotubes growing characteristics. It was observed that carbon nanotubes grown on SiO2 under-CNT-metallization layer recorded the highest density and smallest diameter. When Cu or Cr under-CNT-metallization layers were employed, high density and larger diameter nanotubes were obtained. No carbon nanotubes were found on samples with Al under-CNT-metallization layer under similar growth conditions. These findings add significant reference values for selection under CNT metallization layers suitable for carbon nanotube interconnect applications.
      Subject
      DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
      Type
      Research Report
      Collections
      • EEE Research Reports (Staff & Graduate Students)

      Show full item record


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       


      NTU Library, Nanyang Avenue, Singapore 639798 © 2011 Nanyang Technological University. All rights reserved.
      DSpace software copyright © 2002-2015  DuraSpace
      Contact Us | Send Feedback
      Share |    
      Theme by 
      Atmire NV
       

       

      DCSIMG