Molecular beam epitaxial growth of GaAs/AlGaAs heterostructure and nitrogen-containing alloy on patterned substrate
Loke, Wan Khai.
Date of Issue2003
School of Electrical and Electronic Engineering
The low growth temperature of nitride-arsenide materials (GaNas and GaInNAs) using molecular beam epitaxy (MBE) has proven their potential for applications in optoelectronics integration using the epitaxy-on-electronics (EoE) technique.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Nanyang Technological University