Design, modelling and characterisation of submicron MOSFETs.
Lim, Khee Yong.
Date of Issue2001
School of Electrical and Electronic Engineering
A novel approach to formulating unified compact threshold voltage and drain current models for deep-submicron MOSFETs are present, which is based on a combined anlaytical derivation, (2-D) numerical simulation, and experimental correlation.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University