Copper metallization for deep submicron integrated circuits.
Li, Chao Yong.
Date of Issue2003
School of Electrical and Electronic Engineering
Three types of diffusion barrier layers, Ta, TaN and multi-stacked Ta/TaN, had been employed. The properties of these barrier films and their effect on the properties of the ionized metal plasma (IMP) Cu films such as the density, surface morphology, microstructure and stress, as well as the thermal stability of the Cu/barriers/SiO2/Si structures had been investigated.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Nanyang Technological University