Characterization of ultrathin gate dielectric films.
Leong, Li Ying.
Date of Issue2003
School of Electrical and Electronic Engineering
This study reports on the effect of Fowler-Nordheim injection stress on the gate oxide above the channel and edge (gate/drain overlap) regions. Several methods for electrical characterization of the gate dielectric are used to study the types of charge trapping at the Si-SiO2 interface, channel and edge regions.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Nanyang Technological University