Modeling of MESFET/HEMT including high frequency effects.
Lee, Ting Huang.
Date of Issue2001
School of Electrical and Electronic Engineering
The behaviour of MESFET and HEMT devices in different frequency regions have been observed in the thesis. The observations are modeled using the small-signal equivalent circuit models.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University