Ni-alloy silicides for advanced Si technologies.
Chaw, Joanna Yane Yin.
Date of Issue2004
School of Electrical and Electronic Engineering
This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation technology for the integration into future complementary metal-oxide-semiconductor (CMOS) devices. In the self-aligned silicidation process, metal silicide is formed not only on the single crystalline source/drain regions for contact metallization, but also on the polycrystalline gate electrode to reduce the polysilicon (poly-Si) line resistance. Hence, experiments were carried out to study the phase transformation and thermal stability of Ni- and Ni(5 and 10 at.% Pt)-silicides on both single crystalline and polycrystalline samples which include Si(100), SiGe(lOO), SiGeC(lOO), poly-Si and poly-SiGe.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Nanyang Technological University