Characterization of gate oxide degradation caused by electrical stress.
Date of Issue2003
School of Electrical and Electronic Engineering
In this thesis, the degradation of ultrathin gate oxide caused by electrical stress has been studied in detail. Interface trap generation and oxide charge trapping in the gate oxide are the two key issues for electrical stress-induced degradation. In this work, gate-controlled-diode (GCD) and direct-current current-voltage (DCIV) techniques have been used.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Nanyang Technological University