Investigation and analysis of 1/f noise in sub-micron NMOS devices.
Date of Issue2004
School of Electrical and Electronic Engineering
This thesis develops a systematic framework for the flicker noise measurement, characterization and simulation of deep sub-micron MOSFETs. In particular, the low frequency noise in 0.13 micrometer NMOS devices is investigated. The devices used throughout this project have been fabricated according to the triple well 0.13 micrometer CMOS technology with different doses of phosphorous: 1x10e13/cm2, 2x10e13/cm2 and 3x10e13/cm2 in Deep-Nwell (secondary body).
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University