Determination of carrier lifetime in power semiconductor devices.
Goh, Chee Hiong.
Date of Issue2003
School of Electrical and Electronic Engineering
In this project, a comparative study on the three ramp reverse recovery methods and Open Circuit Voltage Decay (ECVD) will be carried out to the P+NN+ power diode with a uniform lifetime profile and a non-uniform lifetime profile using simulations done by the Medici Numerical Simulator. The importance of considering a non-uniform lifetime profile is to suit the new fabrication techniques.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University