Process capability index (CPK) improvement for NMOS transistor IDSAT of 0.3 micrometer technology
Goh, Beng Lee.
Date of Issue2003
School of Electrical and Electronic Engineering
NLDD layer is normally considered as non-critical masking layer for 0.3?m technology. Nonetheless, it is a layer of interest in this study. This layer was first brought to attention due to wafers failing low of Idast of NMOS transistor and the problem was attributed to the marginality seen at this layer.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Nanyang Technological University