Improvement of contact resistance through barrier metallization optimization
Goh, Edwin Beng Chye.
Date of Issue2003
School of Electrical and Electronic Engineering
Development of CVD_TI (Ti film deposition using Chemical Vapour Deposition technique) process in place of PVD (Physical Vapour Deposition) process for 0.15 micrometer generation ofr DRAM contact barrier layer process was carried out and success was achieved.
DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Nanyang Technological University