Fabrication of InGaP high electron mobility transistors by electron beam technique.
Gay, Boon Ping.
Date of Issue1999
School of Electrical and Electronic Engineering
Recently, there has been great interest in the development of the InxGa|.xP material system as an alternative to AlyGai_yAs, for applications, such as in high electron mobility transistors, heterojunction bipolar transistors and diode lasers. This is attributed to the several advantages that InxGai.xP has over AlyGai.yAs. InxGai_xP does not appear to exhibit problems with donor-related deep traps, which can cause instabilities in the threshold voltage and transconductance of the transistor. In addition, the InxGai_xP/GaAs heterointerface has been shown to have a low carrier recombination velocity, and can be selectively wet etched in HCl-based solutions. Therefore, this thesis presents the device fabrication and characterisation of the InxGai.xP/In0.2oGao.8oAs HEMT.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University