Study of gap states in hydrogenated amorphous silicon carbide and amorphous carbon grown with ECR-CVD.
Date of Issue2003
School of Electrical and Electronic Engineering
One of the attractive properties of amorphous semiconductors is that their characteristics can be varied through changing their composition. As such, a wide variety of hydrogenated amorphous silicon alloys have been studied for their potential for various applications. In this respect, hydrogenated amorphous silicon carbide is the most promising.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Nanyang Technological University