Improved effective channel length extraction method for 0.09-0.13 mm CMOS
Eng, Chee Wee
Date of Issue2008
School of Electrical and Electronic Engineering
This work involves the detailed study and understanding of physical limits and shortcoming of existing electrical parameter extraction methodology i.e. effective channel length (Leff) extraction. This work not only improves and overcomes the limit of an existing Leff extraction method. In fact, an original and new method of Leff extraction has been developed through the discovery of new device physics for state-of-the-art metal-oxide-semiconductor field-effect-transistors (MOSFETs) with ultra-thin gate oxide (? 2 nm).
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University