Design of insulated gate bipolar transistor using novel structure
Date of Issue2002
School of Electrical and Electronic Engineering
In this work, Lateral Insulated Gate Bipolar Transistor (LIGBT) based on a novel structure of partial Silicon On Insulator (partial SOI) has been designed. The position of the silicon window has been determined by comparing the simulation results of full SOI and partial SOI, which has the silicon window etched underneath anode or cathode.
DRNTU::Engineering::Electrical and electronic engineering::Power electronics
Nanyang Technological University