Design and fabrication of surface micromachined microbolometer for IR image sensor.
Date of Issue2002
School of Electrical and Electronic Engineering
In this thesis, the integration of CMOS devices with microbolometer on the same silicon chip was studied. Silicon based materials Poly-Si and Poly-SiGe layers were deposited as the sensor films as well as the CMOS gate electrode. Microbolometer test structures and CMOS devices were fabricated using separately process flows.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University