MOSFET noise modeling for wireless applications.
Date of Issue2003
School of Electrical and Electronic Engineering
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The high frequency (HF) noise model is based on the equivalent circuit of the MOS device, but it takes into account both the gate resistance distribution and hot carrier effect.
DRNTU::Engineering::Electrical and electronic engineering::Wireless communication systems
Nanyang Technological University