dc.contributor.authorLin, Jingyuan.
dc.date.accessioned2010-05-12T08:28:23Z
dc.date.available2010-05-12T08:28:23Z
dc.date.copyright2010en_US
dc.date.issued2010
dc.identifier.urihttp://hdl.handle.net/10356/38593
dc.description.abstractThe time to void nucleation and the time for void growth to failure were determined using a program code based in MATLAB environment under pulsed current conditions. The program code is a solution to a partial differential equation of a widely used Korhonen-Clement model. Based on the simulated results, for void nucleation, the duty cycle exponent, m, and the current density exponent, n, were evaluated to be 1.99 and 1.98, respectively. For void growth to failure, the m and n values were estimated to be 0.97 and 0.95. Both the m and n values evaluated for void nucleation and void growth follows the average current density model, which is a modified Black’s equation.en_US
dc.format.extent46 p.en_US
dc.language.isoenen_US
dc.rightsNanyang Technological University
dc.subjectDRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnectsen_US
dc.titleModeling of electromigration failure under pulsed current conditions in confined copper interconnect.en_US
dc.typeFinal Year Project (FYP)en_US
dc.contributor.supervisorGan Chee Lip (MSE)en_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.degreeMATERIALS ENGINEERINGen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record