Predictive technology modeling for deep-submicron MOSFET design.
Date of Issue2002
School of Electrical and Electronic Engineering
The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is explored in this thesis. The devices are designed for a broad range of nMOSFETs with different pile-up/different LDD extension under gate structures. The investigations inludes numerical modeling for threshold voltage, with different pile-up structure MOSFETs.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University