dc.contributor.authorSantosh Kumar Pani.en_US
dc.date.accessioned2010-04-23T02:15:26Z
dc.date.available2010-04-23T02:15:26Z
dc.date.copyright2006en_US
dc.date.issued2006
dc.identifier.citationSantosh Kumar Pani. (2006). Study of roughness evolution during reactive ion etching. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/35966
dc.description189 p.en_US
dc.description.abstractPolymers are promising candidates for cost-sensitive integrated optical components such as waveguides and waveguide based devices for communication applications and optical interconnects for chip to chip, board to board and back plane applications because of their versatility. Reactive ion etching (RIE) is a commonly used patterning technique for the fabrication of polymeric waveguides and waveguide based devices. One important consequence of RIE in the fabrication process is the evolution of roughness at different interfaces. Current research focuses the fabrication of polymeric optical waveguides by photolithography and RIE with the emphasis on issues which are bottlenecks for the waveguiding/interconnects technologies. In particular, this research work concentrates on studies of various types of roughness evolved during RIE of polymeric waveguides. Important contributions to the field of waveguiding/interconnect technologies include measurement of various types of roughness evolved during RIE, new discovery of etch depth dependences and the explanation of this phenomenon based on Monte Carlo simulation of etch-ion dynamics, formulation of the hypotheses and the etching mechanism, and controlling these roughnesses by developing novel recipes.en_US
dc.subjectDRNTU::Engineering::Materials::Plasma treatment
dc.titleStudy of roughness evolution during reactive ion etching.en_US
dc.typeThesisen_US
dc.contributor.supervisorWong Chee Cheong.en_US
dc.contributor.schoolSchool of Materials Science and Engineeringen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (MSE)en_US


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