dc.contributor.authorThaw Zin Myint.en_US
dc.date.accessioned2008-09-17T09:32:48Z
dc.date.available2008-09-17T09:32:48Z
dc.date.copyright2004en_US
dc.date.issued2004
dc.identifier.urihttp://hdl.handle.net/10356/3576
dc.description.abstractOpen-circuit and short-circuit defects in electrical conductors within integrated circuits (ICs) can result in major IC yield and reliability problems. A capability for localizing and identifying these types of defects is important for analyzing ICs to determine failure mechanisms therein, for qualifying ICs as known-good devices, and for implementing corrective action during IC fabrication to minimize the occurrence of such defects.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
dc.titleNew techniques for localization of shorted and open interconnect failures in ICs by using laser beam technology.en_US
dc.typeThesisen_US
dc.contributor.supervisorOng, Vincent Keng Sian.en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMSC(CONSUMER ELECTRONICS)en_US


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