dc.contributor.authorTey, Shih Hwee.en_US
dc.date.accessioned2008-09-17T09:32:35Z
dc.date.available2008-09-17T09:32:35Z
dc.date.copyright2003en_US
dc.date.issued2003
dc.identifier.urihttp://hdl.handle.net/10356/3568
dc.description.abstractThis thesis records the details of two investigations that were performed. The first investigation, believed to be the first of its kind, was on the study of the feasibility of using second harmonic microscopy (SHM) to measure copper concentration and possible diffusion mechanisms at the surfaces and interfaces of microelectronic interconnect structures. The second investigation was on the impact of intentional copper contamination on the performance of semiconductor devices. Copper contamination, both from backside and frontside of wafers were studieden_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
dc.titleExperimental study of copper contamination in VLSI technologyen_US
dc.typeThesisen_US
dc.contributor.supervisorPrasad, Krishnamachar.en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMASTER OF ENGINEERING (EEE)en_US


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