dc.contributor.authorTeo, Chee Hiang.en_US
dc.date.accessioned2008-09-17T09:32:01Z
dc.date.available2008-09-17T09:32:01Z
dc.date.copyright2003en_US
dc.date.issued2003
dc.identifier.urihttp://hdl.handle.net/10356/3545
dc.description.abstractThe aim is to study the behaviour of copper film stack deposited on silicon wafers as a function of temperature and time by monitoring the sample curvvature during a specified thermal history.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
dc.titleStress measurement in copper filmsen_US
dc.typeThesisen_US
dc.contributor.supervisorPrasad, Krishnamacharen_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeMSC(MICROELECTRONICS)en_US


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