Characterization of flourosilicate glass (FSG) as low dielectric constant material
Teh, Young Way.
Date of Issue2002
School of Electrical and Electronic Engineering
The characterization of flourine doped oxide (FSG) film as a low-k- dielectric material involved three main parts. In the first part of the project, the effect flourine incorporation and increasing flourine content on the film structure and dielectric constant were studied. The incorporation of Si-Fx bonds generates significant structural change in the SiO matrix.
DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Nanyang Technological University