Effects of copper diffusion on the performance of MOS devices.
Tee, Kheng Chok.
Date of Issue2000
School of Electrical and Electronic Engineering
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metallizations for MOS devices. Results are also presented on the effect of deliberate Cu contamination on the performance of MOS devices.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Nanyang Technological University