Unified AC charge and DC current modeling for very-deep-submicron CMOS technology.

Abstract

A novel approach to formulating unified charge and drain current models for MOSFETs is presented. The charge modeling methodology is based on three regional surface-potential solutions, which describes three operating regions in MOSFETs. The modeling approach is extended to all regions with an explicit single-piece unified compact charge model. This is also to ensure charge-neutrality across different regions of operation especially at the flat-band condition. The charge modeling approach requires no modification in formulation to include coupled polycrystalline silicon and quantum-mechanical effects for all regions. The approach has been shown to have the potential to be extended to non-conventional bulk-Si MOSFETs structure such as in strain-Si or hetero-structure MOSFETs.