Single-ended broadband silicon carbide MESFET power amplifier
Date of Issue2006
School of Electrical and Electronic Engineering
Single-ended broadband amplifier was designed using Silicon Carbide MESFET. Taking into account, the device internal properties of wide-bandgap and high impedances. It makes single-ended broadband amplifier realizable by using simple matching networks.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University