Design and fabrication of III-V RF devices for MMIC applications
Ang, Kian Siong
Date of Issue1999
School of Electrical and Electronic Engineering
Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.
DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Nanyang Technological University