dc.contributor.authorNg, Say Tyam.en_US
dc.identifier.citationNg, S. T. (2007). Band structures and optical properties of InGaNAs quantum wells. Doctoral thesis, Nanyang Technological University, Singapore.
dc.description.abstractThis thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
dc.titleBand structures and optical properties of InGaNAs quantum wells.en_US
dc.contributor.supervisorFan, Weijun.en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US

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