dc.contributor.authorNg, Say Tyam.en_US
dc.date.accessioned2008-09-17T09:30:10Z
dc.date.available2008-09-17T09:30:10Z
dc.date.copyright2007en_US
dc.date.issued2007
dc.identifier.citationNg, S. T. (2007). Band structures and optical properties of InGaNAs quantum wells. Doctoral thesis, Nanyang Technological University, Singapore.
dc.identifier.urihttp://hdl.handle.net/10356/3436
dc.description.abstractThis thesis presents theoretical studies of electronic band structures and optical properties for compressively strained InGaAsN/GaAs quantum well (QW). We have used a realistic 10-band k.p model for the detailed calculation of band structures and have even studied the QW structure with tensile GaAs/GaAsP/GaAs compounded barrier. Strained conduction band offset ratio (Qc) of InGaAsN/GaAs was proposed. Together with band gap energy (EG) and electron effective mass (m*) based on band-anticrossing (BAC) model, we are able to predict quantum well transition energies that is reasonably close to the reported experimental values. Model-dependent prediction of transition energy (Eeh) and energy separation of conduction subbands were also conducted using additional 8-band and 6-band k.p models, which neglect nitrogen related energy level (EN) and conduction-valence band interaction, respectively.en_US
dc.rightsNanyang Technological Universityen_US
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
dc.titleBand structures and optical properties of InGaNAs quantum wells.en_US
dc.typeThesisen_US
dc.contributor.supervisorFan, Weijun.en_US
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen_US
dc.description.degreeDOCTOR OF PHILOSOPHY (EEE)en_US


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