Process and device characterisation of advanced SOI devices.
Chan, Yeen Tat.
Date of Issue2005
School of Electrical and Electronic Engineering
The goal of this work is to investigate and develop fabrication technology for quadruple-gate (hereby called Double-gate-all-around) MOSFET and the novel n-gate device. It focuses on the process and device characterization of such advanced SOI devices. Most importantly, the process proposed in this work to fabricate such devices is compatible with standard bulk CMOS manufacturing.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University