Physical analysis on ultrathin gate dielectric breakdown using TEM
Tang, Lei Jun.
Date of Issue2005
School of Electrical and Electronic Engineering
In this project, the mechanism of Dielectric Breakdown Induced Epitaxy (DBIE) growth and its effects on the performance of a small size transistor have been further studied. In this research, we focus on studying the dielectric breakdown of 20 A SiOxNy gate dielectric transistors since this gate dielectric technology has been widely used in the current technology node.
DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials
Nanyang Technological University