Fabrication and characterisation of Silicon-Germanium Schottky diode.
Tan, Oscar Aik Poh.
Date of Issue2003
School of Electrical and Electronic Engineering
In this project, both the silicon and silicon germanium schottky barrier diode were fabricated and studied. Pt, Ti and W metal were investigated as schottky materials. Pt/n-Si, Ti/n-Si, W/n-Si, Pt/p-Si, Ti/p-Si and W/p-Si schottky diodes were fabricated and found to give good quality schottky diode performance with suitable fine-tuning of the fabrication process to reduce over-alloying.
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Nanyang Technological University