Modelling and characterisation of heterostructure devices for MMIC application
Date of Issue2001
School of Electrical and Electronic Engineering
For development of MMIC amplifier using GaAs HEMT and HBT devices developed in-house, it is essential to select devices of appropriate size for best power performance. The overall objective of this has been dc and microwave characterization of HEMT and HBT devices.
DRNTU::Engineering::Electrical and electronic engineering::Electronic circuits
Nanyang Technological University